2020.02.12 14:56

IMID 2019, Gyeongju, Korea

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IMID 2019, Gyeongju, Korea

August 27 - 30, 2019 (Tue. - Fri.), HICO



Shift Register Circuit Based on Coplanar a-InGaZnO Thin Film Transistors with Photo-Patterned Ionic-Polymer Gate Dielectric

Yongchan Kim, Changhyeon Cho, So Young, Kim, Do Hwan Kim, and Hojin Lee



용찬_IMID.jpg





Abstract


  Currently, the gate dielectric using the ionic polymer comprising ionic liquids in a polymer matrix to form the electric double layer (EDL) has been extensively studied thin-film transistors field thanks to its advantages of induced ultra-high density carrier attainability in the channel, improved capacitive coupling, low-voltage operation, and low-temperature fabrication process [1, 2]. For patterning the ionic polymer to be used as a gate dielectric for the complex circuits, there have been many different approaches reported such as ‘cut and stick’ method, aerosol printing process, or using additional mold to isolate the ionic liquids. However, most of methods reported so far have challenged on realizing micron-sized fine patterns. In this paper, we adopted photo-patternable ionic polymer as a gate dielectric in the coplanar TFT structure where the gate, source, and drain electrodes were deposited by one lift-off process.


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2020.02.12 14:58

IMID 2019, Gyeongju, Korea

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IMID 2019, Gyeongju, Korea

August 27 - 30, 2019 (Tue. - Fri.), HICO



Active pixel sensor circuit using photo-patternable ionic PUA based coplanar a-InGaZnO TFTs

Changhyeon Cho, Yongchan Kim, So Young, Kim, Do Hwan Kim, and Hojin Lee



창현_IMID.jpg




Abstract


  Currently, the gate dielectric using the ionic polymer comprising ionic liquids in a polymer matrix to form the electric double layer (EDL) has been extensively studied thin-film transistors field thanks to its advantages of induced ultra-high density carrier attainability in the channel, improved capacitive coupling, low-voltage operation, and low-temperature fabrication process [1, 2]. For patterning the ionic polymer to be used as a gate dielectric for the complex circuits, there have been many different approaches reported such as ‘cut and stick’ method, aerosol printing process, or using additional mold to isolate the ionic liquids. However, most of methods reported so far have challenged on realizing micron-sized fine patterns. In this paper, we adopted photo-patternable ionic polymer as a gate dielectric in the coplanar TFT structure where the gate, source, and drain electrodes were deposited by one lift-off process.


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2024.01.11 17:13

IEEE-NEMS 2023, Jeju, Korea

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IEEE-NEMS 2023, Jeju, Korea

May 14 - May 17, 2023 (Sun. - Wed.), Ramada Plaza Hotel


Patch-Type Electromagnetic Energy Focusing Metasurface for Wireless Power Transfer in Bio-Implantable Devices

Wonwoo Lee, Semin Jo, and Hojin Lee


Abstract

 Herein, a patch-type metasurface is proposed that improves the power transferred to the skin by reducing the reflection loss of electromagnetic waves at the air–skin interface and forming a focal point at a specific location. The subwavelength-thickness (< λ/10) metasurface is introduced that focuses electromagnetic energy to a desired depth in multilayered biological tissues to enhance the transferred power for implantable devices. The stable focusing performance is demonstrated by confirming the robust focal point and field intensity profiles for oblique incident angles and polarization directions with enhanced voltage of approximately 11.1 dBmV at a depth of 10 mm in an in-vitro environment. By applying the patch-type metasurface to an actual implemented wireless power transfer system, an improved transmission coefficient of 6.37 dB is realized at a depth of 10 mm compared with that of a system without the metasurface patch.

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2025.01.23 13:25

ICEIC 2025, Osaka, Japan

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ICEIC 2025, Osaka, Japan

January 19 - January 22, 2025 (Sun. - Wen.), Osaka International House


이경 따봉.jpg


A Novel Low-Power Level Shifter With Stacked Structure Based on a-IGZO Thin-Film Transistors


Kyeongbin Lee, Kyungmin Choi, Hyunwoo Kim and Hojin Lee


Abstract


 In this paper, we propose a novel level shifter based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The proposed level shifter achieves low power consumption by employing a stacking structure and enhances connectivity with the external panel by using only a single input clock signal.

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2025.01.23 13:23

ICEIC 2025, Osaka, Japan

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ICEIC 2025, Osaka, Japan

January 19 - January 22, 2025 (Sun. - Wen.), Osaka International House


채연 발표_편집본.jpg


Design of Low Power Scan Driver Based on a-InGaZnO TFTs for Frame Masking Technique with Extra Clock Signal Modulation


Chaeyeon Park, Dongseok Kim, Hyunwoo Kim, and Hojin Lee


Abstract


We proposed a novel low-power scan driver using frame masking techniques, which selectively disables scan driver outputs based on the type of content, thereby reducing unnecessary pixel updates. The proposed frame masking drive effectively reduces power consumption not only for the scan driver but also for the display panel itself.

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