2022.11.11 20:29

IMID 2022, Pusan, Korea

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IMID 2022, Pusan, Korea

August 23 - August 26, 2022 (Tue. - Fri.), Bexco


KakaoTalk_20221111_165637141.jpg


Adaptive Frequency Driving Scan Driver Combined with Logic Circuit based on a-InGaZnO TFTs

Jinho Moon, Eseudeo Yun, Yongchan Kim, and Hojin Lee


Abstract

  

Recently, due to the interest on flexible, wearble, and portable electronics as futre technologies, the demand for high-resolution display is expended. Although, faster frame rate and smaller area for the display is required, increased power consumption is incurred in high-performance display. Typically, for high-resolution displays, amorphous indium gallium zinc oxide thin film transistor (a-InGaZnO TFT) is actively researched because of its’ visible transparency, good uniformity, and utmost low off-current advantages rather than low temperature polycrystalline silicon (LTPS) TFT and amorphous silicon (a-Si) TFT. However, the a-InGaZnO TFT operates in depletion-mode because VTH has negative values by the different indium component ratio and by the electrical characteristic variation due to the different bias stress such as illumination and bias stress. In this paper, we propose a adaptive frequency driving scan driver based on a-InGaZnO TFT with depletion-mode operation.

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2022.11.11 20:32

IMID 2022, Pusan, Korea

조회 수 368 추천 수 0 댓글 0
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IMID 2022, Pusan, Korea

August 23 - August 26, 2022 (Tue. - Fri.), Bexco


KakaoTalk_20221111_165547216_03.jpg


Novel AMOLED Pixel Circuit Compensating for Variations in Sub-threshold Swing and Threshold Voltage of a-IGZO Thin-Film Transistors

Hyunwoo Kim, Yongchan Kim, and Hojin Lee


Abstract

  

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have been employed for the backplane of AMOLED displays because of high carrier mobility, good uniformity, and low off currenet. However, it is inevitable to have variations in threshold voltage (VTH) and sub-threshold swing (S.S.) due to bias-stress during display operations as well as the fabrication deviations. The VTH shift can be attributed to charge trapping in gate dielectric and interface states of semiconductor materials while the S.S. variation can cause a problem of leakage current that increases power consumption. Therefore, a circuit-level compensation method for deviation is required. In this paper, we have proposed a novel a-IGZO TFT pixel circuit which can compensate for the VTH and S.S. variation of the drive TFT.

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2022.11.11 20:37

IMID 2022, Pusan, Korea

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IMID 2022, Pusan, Korea

August 23 - August 26, 2022 (Tue. - Fri.), Bexco


KakaoTalk_20221111_165547216_08.jpg


Ultra-High Resolution Organic Light-Emitting Diodes Based on Plasmonic Patterned Nanograting Array

Ryungyu Lee, Keun-Yeong Choi, and Hojin Lee


Abstract

  

Organic light-emitting diodes (OLEDs) have led to the rapid growth of the next-generation display technology due to high luminance efficiency, vivid color, and high contrast ratio, thereby expanding their applications from conventional mobile or TV displays to virtual reality (VR)/ augmented reality (AR) displays. For more effective light extraction, implementing nanostructures onto metal electrode layer of OLEDs as a future display technology has been demonstrated by use of excitation and out-coupling of the surface plasmon-polariton modes (SPPs). In this work, we propose a high resolution OLEDs based on plasmonic patterned nanograting array (PNA) that induces a plasmonic effect on OLEDs through the nano-patterned organic emission layer by applying E-beam lithography on the fabrication process without deterioration of intrinsic physical/photoelectric properties of organic layers.

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2022.11.11 20:39

IMID 2022, Pusan, Korea

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IMID 2022, Pusan, Korea

August 23 - August 26, 2022 (Tue. - Fri.), Bexco


KakaoTalk_20221111_165547216_12.jpg


Monolithic Circuit Integrated with VOC Sensor Based on a-IGZO TFT

Eseudeo Yun, Yongchan Kim, Hanbin Choi, Do Hwan Kim, and Hojin Lee


Abstract

  

As volatile organic compound (VOCs) gases generated in industrial production lines is harmful to the human body, study on detecting VOCs gases has attracted much interest. For detection of various VOCs, Amorphous oxide semiconductors (AOS) have been highly researched to produce high-sensitivity chemoresistive-type VOCs gas sensors. Especially, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) are considered the most promising candidate for gas sensors, thanks to their high field-effect mobility, low leakage current, good uniformity, and superior electrical stability with the low-temperature process. However, a-IGZObased gas sensors reported so far still remain in an early stage such as for resistor-type sensor or a single TFT. In this talk, we proposed a monolithic sensor circuit with high sensitivity capable of amplifying the sensing signal of the solution-processed a-IGZO sensor TFT. 

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2020.02.12 14:51

IMID 2019, Gyeongju, Korea

조회 수 379 추천 수 0 댓글 0
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IMID 2019, Gyeongju, Korea

August 27 - 30, 2019 (Tue. - Fri.), HICO




Micropatterned polymer light-emitting diodes (μ-PLEDs) based on Orthogonal Polymer Semiconductors

Kyun-Yeong Choi, Han Wool Park, Do Hwan Kim, and Hojin Lee


근영_IMID.jpg


Abstract


  In this paper, a micro-patterned 2-color OLED was fabricated through a sequential solution process based on standard photolithography. Previously, we

developed a sol-gel process to obtain the orthogonality of organic semiconductor against the solvents and chemicals so that we could apply the standard photo-lithography and dry-etch process to achieve micron-size patterns of light-emitting polymers with MEH-PPV and F8T2-based orthogonal polymer semiconductor gel (OPSG) through sequential solution processes.


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