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SID Display Week 2023, San Jose, USA

May 12 - May 17, 2024 (Sun. - Fri.), San Jose Convention Center


KakaoTalk_20240618_155316141_03.jpg


Extreme Low Power a-InGaZnO TFT Scan Driver with Extra Clock Signal Modulation

Hyunwoo Kim, Jinho Moon, Dongseok Kim, and Hojin Lee


Abstract

 In this paper, a scan driver with extra clock signal using amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) is proposed. Extra clock signal with variable frequency modulates the pull-down unit of scan driver in order to reduce the power consumption. Proposed scan driver is suitable for operating extreme low-power displays such as always on display.



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SID Display Week 2023, Los Angeles, USA

May 22 - May 26, 2023 (Mon. - Fri.), Los Angeles Convention Center


KakaoTalk_20230530_142910510_05.jpg


An AMOLED Pixel Circuit Compensating for Variation of Sub-threshold Swing and Threshold Voltage Based on Double Gate a-IGZO TFTs 

Hyunwoo Kim, Yongchan Kim, and Hojin Lee

Abstract

   In this paper, an AMOLED pixel circuit based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) compensating for variations in sub-threshold swing (SS) and threshold voltage (VTH) of driving TFT is proposed. The proposed pixel circuit is composed of five TFTs and one capacitor. From the simulation results, when the SS and VTH shifts of the driving up to ±10% and ±1 V, the maximum OLED current error can be suppressed to 3.6% and 7.2%, respectively. 

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SID Display Week 2023, Los Angeles, USA

May 22 - May 26, 2023 (Mon. - Fri.), Los Angeles Convention Center


KakaoTalk_20230530_142824454_16.jpg


Ultra-high Resolution Full-Color OLEDs Patterned by Photo-Lithography

Ryungyu Lee, Keun-Yeong Choi, Hyukmin Kweon, Borina Ha, Do Hwan Kim, and Hojin Lee


Abstract


   In this paper, we present an ultra-high resolution organic light-emitting diodes (OLEDs) pixels patterned by conventional photo-lithography via imbuing high chemical and physical resistance to commercial light-emitting polymers through the silicon networked orthogonal gel process. Especially, when silicon networked orthogonal polymers gel layers are pattered by reactive ion etch, a in-situ non-volatile etch-blocking layer (EBL) is formed to prevent pattern distortion or damage. This unique feature not only slows the etch rate but also enhances the anisotropy of etch direction, leading to achieve ultra-high resolution multicolor OPSG-based OLED patterns (up to 4,500 pixels per inch) through photolithography. This patterning strategy is expected to provide a novel paradigm toward ultrahigh-resolution OLED microdisplays.


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SID Display Week 2022, San Jose, USA

May 9 - May 13, 2022 (Mon. - Fri.), McEnery Convention Center


SID 문.jpg


Adaptive Frequency Driving Scan Driver with NOR Logic Gate Based on a-InGaZnO TFTs

Jinho Moon, Eseudeo Yun, Yongchan Kim, Kwun-Bum Chung, and Hojin Lee


Abstract


  A scan driver combined with NOR Logic gate using amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) is proposed. NOR logic gate masks the output signal from the scan driver in order to control the driving frequency. Proposed frequency adaptive scan driver is expected to reduce power consumption depending on the display contents.



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SID Display Week 2022, San Jose, USA

May 9 - May 13, 2022 (Mon. - Fri.), McEnery Convention Center


SID 윤.jpg


Low-Power a-IGZO TFT Shift Register Featuring i-PUA Gate Dielectric

Eseudeo Yun, Yongchan Kim, Hanbin Choi, Dukhyun Choi, Do Hwan Kim, and Hojin Lee


Abstract


  A low-power shift register circuit based on coplanar a-IGZO TFTs using photo-patternable micron-sized i-PUA is proposed for next-generation display. We confirmed that the fabricated shift register circuit consisting of six coplanar a-IGZO TFTs and one capacitor successfully operates with low-power driving within 3 V at various frequencies.

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