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2015 MRS fall Meeting, Boston, USA

November 29 - December 4, 2015 (Mon - Fri), John B. Hynes Veterans Memorial Convention Center

 

MRS1.jpg

<Poster Session : BB3-32>

Photolithography-Adaptive Organic Semiconductors for High-Resolution Flexible Tandem Electronics

Han wool  Park1, Keun-Yeong  Choi2, Hojin  Lee2, Do Hwan  Kim1

 

 

Abstract

Organic electronics has recently attracted a great deal of interest because of its solution-processed potential applications in flexible, wearble, and even stretchable devices. This, however, serves as a trade-off when one tries to implement these processes in assembling practical electronic devices, since the as-deposited films would be fragile to subsequent solution processes. Consequently, conventional photolithography is hardly applicable to solution-processed organic semiconductor layers for getting high-resolution pattern. In this talk, we demonstrate the whole new type of organic materials based on sol-gel chemistry, which is capable of remarkably showing chemical and mechanical stability during photolithography process. The critical step in a sol-gel reaction is the formation of a highly cross-linked network out of molecular precursors through hydrolysis and condensation reactions. By carefully manipulating this step, we could prepare self-assembled structures of either quasi-3D random or ladder characteristics. The resulting structures yielded films that are highly tolerant against harsh external stimuli. Moreover, the peculiar topology of organometallic gel network containing with molecular pores could be successfully utilized as a template to form a heterogeneous interpenetrated network (HIPN) with functional electronic organic units. As a result, we could achieve micron scaled patterns of organic semiconductor through the standard photolithography. Based on electrical properties of thin-film transistors with patterned organic semiconductor layers, we successfully designed and demonstrated a CMOS inverter circuit with micro-patterned n- and p-type channels based orthogonal organic semiconductor gels through sequential solution processes.

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2015 iMiD, Daegu, Republic of Korea

August 18 - 21, 2015 (Tue - Fri), EXCO

 

imid2015_H_Jung.jpg

 

<Oral Session : 12-4>

Synthetic Multi Spectral Metamaterials for Frequency Selective Terahertz-Color Filter

Hyunseung Jung, Heyoung Kang, and Hojin Lee

 

Abstract

In this paper, we demonstrate numerical and experimental studies of the tunable synthetic multi-spectral material (SMM) filter for visible and terahertz ranges. The proposed filter is based on double layered complementary cut wires (CCWs) to construct a thin-film etalon structure. The proposed SMM filter can be fully the fabricated by the conventional photolithography process, and it is confirmed to work as both the transmissive color filter and terahertz filter. From measurement results, we confirm that by adjusting thickness of resonance cavity, SMM filter can show different colors in the visible range but maintain the same transmission spectra in the terahertz range. Furthermore, it is also demonstrated that by adjusting pitch of CCW patterns, transmission peak of the SMM filter can be controlled in the terahertz range while the transmission spectra in the visible range can be kept same.

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2015 iMiD, Daegu, Republic of Korea

August 18 - 21, 2015 (Tue - Fri), EXCO

 

IMG_2994.JPG

 

 

<Poster Session : P2-63>

Novel Operational Amplifier Based on a-InGaZnO TFTs for the Display Driving System

Yongchan Kim, Keun-Yeong Choi, Kichan Kim, and Hojin Lee

 

Abstract

In this paper, we proposed a novel operational amplifier (op-amp) by using amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). The proposed op-amp is composed only with n-type TFTs, and can be fabricated within the area of . Through the simulation, the proposed op-amp is confirmed to have an open-loop voltage gain of 29dB at up to 2.6kHz when supply voltage is ±15V. We expect the proposed a-InGaZnO TFT op-amp to be used in designing the power control and driving system for various display applications.

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2014.10.24 21:51

2014 SSDM, Tsukuba, Japan

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2014 SSDM, Tsukuba, Japan

September 8 - 11, 2014 (Mon - Thu), Tsukuba International Congress Center

2.jpg

<Oral Session : B-3-7>

Synthetic Multi-Spectral Material Filter based on Terahertz Metamaterial Combined with Thin-Film Etalon Structure

Heyoung Kang, Hyunseung Jung and Hojin Lee

 

Abstract

In this paper, we demonstrate a numerical and experimental study of novel synthetic multi-spectral material (SMM) filters for visible and terahertz ranges. The proposed filter is based on double-layered complementary split ring resonators (CSRRs) combine with a thin-film etalon structure. The fabricated SMM filter can be fully the fabricated by conventional photolithography process to be confirmed to work as the transmissive color filter as well as the polarization dependent terahertz filter.

 

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2014 SPIE Optics + Photonics, San Diego, USA

August 17-21, 2014 (Sunday - Thursday), San Diego Convention Center

11.JPG


 

<Poster Session : 9160-100>

Anisotropy modeling of polarization dependent terahertz metamaterials

Hyunseung Jung and Hojin Lee

 

Abstract

We propose a novel anisotropy modeling of the polarization dependent meta-atoms at terahertz frequencies. The proposed anisotropic metamaterials are composed of metallic microstructures combined with various numbers of H-shaped meta-atoms. We confirm that the proposed metamaterials successfully realize the unique properties that can modulate the resonance frequency for the specific polarization of an incident wave, while can keep one identical resonance frequency for their orthogonal polarization direction, simultaneously. Moreover, regardless of the number of H-shaped meta-atoms as well as the polarization direction, their bandwidth can be kept identical by coupling effects between adjacent meta-atoms and their excited electric dipole moments.

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