2025.01.23 13:25

ICEIC 2025, Osaka, Japan

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ICEIC 2025, Osaka, Japan

January 19 - January 22, 2025 (Sun. - Wen.), Osaka International House


이경 따봉.jpg


A Novel Low-Power Level Shifter With Stacked Structure Based on a-IGZO Thin-Film Transistors


Kyeongbin Lee, Kyungmin Choi, Hyunwoo Kim and Hojin Lee


Abstract


 In this paper, we propose a novel level shifter based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The proposed level shifter achieves low power consumption by employing a stacking structure and enhances connectivity with the external panel by using only a single input clock signal.

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2025.01.23 13:23

ICEIC 2025, Osaka, Japan

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ICEIC 2025, Osaka, Japan

January 19 - January 22, 2025 (Sun. - Wen.), Osaka International House


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Design of Low Power Scan Driver Based on a-InGaZnO TFTs for Frame Masking Technique with Extra Clock Signal Modulation


Chaeyeon Park, Dongseok Kim, Hyunwoo Kim, and Hojin Lee


Abstract


We proposed a novel low-power scan driver using frame masking techniques, which selectively disables scan driver outputs based on the type of content, thereby reducing unnecessary pixel updates. The proposed frame masking drive effectively reduces power consumption not only for the scan driver but also for the display panel itself.

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2024.10.30 14:20

AMSM 2024, Incheon, Korea

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AMSM 2024, Incheon, Korea

October 27 - October 30, 2024 (Sun. - Wen.), Songdo ConvensiA


KakaoTalk_20241030_132639216.jpg


Monolithic VOC Sensor Circuit Based on a-IGZO TFT


Kyungmin Choi, Keun-Yeong Choi, and Hojin Lee


Abstract


Volatile organic compounds (VOCs) generated in industrial production lines are harmful to human health, prompting significant research into detecting VOC gases. For detection of various VOCs, Amorphous oxide semiconductors (AOS) have been highly researched to achieve high-sensitivity chemo-resistive-type VOCs gas sensors. Especially, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) are attracting high attention due to their high field-effect mobility, low leakage current, good uniformity, and superior electrical stability at low processing temperatures. In this paper, we propose a monolithic sensor circuit designed to amplify the sensing signal of solution-processed a-IGZO sensor TFTs, achieving high sensitivity. The fabricated a-IGZO sensor TFT showed significant changes in transfer characteristics upon exposure to acetone gas, with decreased resistance and a negative threshold voltage shift. The proposed circuit, comprising three a-IGZO TFTs and one capacitor, demonstrated successful gas sensing through simulation, confirming accurate operation. Through this study, we confirmed that the proposed a-IGZO TFT sensor circuit was successfully operated with accurate gas sensing operations. It is expected that the proposed monolithic sensor circuit can be applied to future VOCs systems with highly sensitive detection.

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2024.10.30 14:17

AMSM 2024, Incheon, Korea

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AMSM 2024, Incheon, Korea

October 27 - October 30, 2024 (Sun. - Wen.), Songdo ConvensiA


KakaoTalk_20241030_132229360_08.jpg


Electromagnetic Energy Focusing Single-Layer Metasurface for Powering Small Unmanned Vehicle
Wonwoo Lee, Kyungbin Cho, Sanghyun Park, and Hojin Lee


Abstract


Organic photodiodes are ideal for advanced flexible electronic applications such as imaging and video photography due to their tunable photophysical properties, low-cost and simple processing methods, and continuously improving performance. In particular, the simple design and thin thickness of organic material-based devices enable the control of optical and geometrical crosstalk, garnering attention for application in image sensors. Utilizing these organic photodiodes in image sensors necessitates their integration into high-density arrays. This approach is essential for achieving the precise and effective performance required for advanced imaging applications. However, the absence of precise pixelation techniques capable of implementing organic light-emitting semiconductor with high production and reliability has limited the realization of high-density organic photodiodes. In this paper, we present a silicone engineered anisotropic lithography of the organic light-emitting semiconductor (OLES) that in-situ forms a non-volatile etch blocking layer during reactive ion etching. This unique feature not only slows the etch rate but also enhances the anisotropy of etch direction, leading to gain delicate control in forming ultrahigh-density multicolor OLES patterns (minimum line width of 2µm) through photolithography. This patterning strategy inspired by silicon etching chemistry is expected to provide new insights into high-density organic photodiodes. Furthermore, the proposed system is expected to be applicable to flexible substrates, extending its use to soft sensor applications such as artificial eyes.

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2024.10.30 13:53

AMSM 2024, Incheon, Korea

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AMSM 2024, Incheon, Korea

October 27 - October 30, 2024 (Sun. - Wen.), Songdo ConvensiA


KakaoTalk_20241030_132229360_16.jpg


Silicone-Integrated Photolithography for Ultra High-Resolution Organic Photodiodes in Augumented/Virtual Reality Applications


Ryungyu Lee, Keun-Yeong Choi, Hyukmin Kweon, Do Hwan Kim and Hojin Lee


Abstract


Organic photodiodes are ideal for advanced flexible electronic applications such as imaging and video photography due to their tunable photophysical properties, low-cost and simple processing methods, and continuously improving performance. In particular, the simple design and thin thickness of organic material-based devices enable the control of optical and geometrical crosstalk, garnering attention for application in image sensors. Utilizing these organic photodiodes in image sensors necessitates their integration into high-density arrays. This approach is essential for achieving the precise and effective performance required for advanced imaging applications. However, the absence of precise pixelation techniques capable of implementing organic light-emitting semiconductor with high production and reliability has limited the realization of high-density organic photodiodes. In this paper, we present a silicone engineered anisotropic lithography of the organic light-emitting semiconductor (OLES) that in-situ forms a non-volatile etch blocking layer during reactive ion etching. This unique feature not only slows the etch rate but also enhances the anisotropy of etch direction, leading to gain delicate control in forming ultrahigh-density multicolor OLES patterns (minimum line width of 2µm) through photolithography. This patterning strategy inspired by silicon etching chemistry is expected to provide new insights into high-density organic photodiodes. Furthermore, the proposed system is expected to be applicable to flexible substrates, extending its use to soft sensor applications such as artificial eyes.

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