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2014.10.03 04:38

2012 SID Display Week, Boston

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2012 SID Display Week, Boston, Massachusetts USA

June 5-8, 2012 (Tuesday - Friday), Boston Convention and Exhibition Center

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<Poster Session : P14>

a-IGZO TFT Based Pixel Circuits for AM-OLED Displays

Hyunseung Jung, Yongchan Kim, Youngseok Kim, Charlene Chen, Jerzy Kanicki, and Hojin Lee

Abstract

In this paper, we analyze application of amorphous Indium–Gallium–Zinc–Oxide thin film transistors (a-InGaZnO TFTs) to voltage-driven pixel electrode circuit that could be used for 4.3-in. wide video graphics array (WVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compared to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the threshold voltage variation (ΔVTH) of driving TFT within acceptable operating error range.

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2014.10.03 04:38

2013 AM-FPD, Kyoto, Japan

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2013 AM-FPD, Kyoto, Japan

July 2-5, 2013 (Tuesday - Friday), Ryukoku Universiti Avanti Kyoto Hall

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<Poster Session : P4>

A Novel a-InGaZnO TFT Based Voltage Programmed Pixel Circuit to Compensate Threshold Voltage and Mobility Variations

Yongchan Kim, Jerzy Kanicki, and Hojin Lee

Abstract

In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.

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2014.10.03 04:38

2013 iMiD, Daegu, Republic of Korea

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2013 iMiD, Daegu, Republic of Korea

August 26-29, 2013 (Monday - Thursday), EXCOAugust 26-29, 2013 (Monday - Thursday), EXCO

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<Poster Session : P2-54>

A Novel P-type LTPS Pixel Circuit for AMOLEDs with Dual-Compensation Function

Yeonkyung Kim, Yongchan Kim, and Hojin Lee

Abstract

In this paper, we proposed a novel voltage-programmed pixel circuit with p-type low temperature polycrystalline-silicon thin film transistor (LTPS TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on p-type LTPS TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.

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2014.10.03 04:38

2013 SSDM, Fukuoka, Japan

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2013 International conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan

September 24-27, 2013 (Tuesday - Friday), Hilton Fukuoka Sea Hawk

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<Oral Session : K-5-1>

Tunable Bandwidth of Flexible Far-Infrared Filter using Metamaterial based Split-Ring Resonators

Hyunseung Jung and Hojin Lee

Abstract

In this paper, we present numerical and experimental studies of bandwidth tunable metamaterials using an overlap distance manipulation. Micro scale split-ring resonator (SRR) arrays were fabricated and characterized on the flexible polyimide films. We confirmed that the stop bandwidth of the fabricated far-infrared (Far-IR) filter can be tunable from 0.85 to 1.95 THz by longitudinal electric couplings between top and bottom SRRs as expected from simulation results.

 

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2014.10.03 04:38

2014 SID Display Week, San Diego, USA

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2014 SID Display Week, San Diego, USA

June 3-6, 2014 (Tuesday - Friday), San Diego Convention Center

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<Poster Session : P-51>

a-IGZO TFT Based Operational Amplifier and Comparator Circuits for the Adaptive DC-DC Converter

Kichan Kim, Keun-Yeong Choi, Dong-Hyuk Choi, and Hojin Lee

Abstract

In this paper, we present an operational amplifier (op-amp) based on amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs) to achieve a comparator operated by pulse-width-modulation (PWM) control-loop structure, which can be used for dc-dc converter circuits integrated in the display driving system. Based on electrical characteristics of the fabricated a-InGaZnO TFT, we proposed a novel NMOS opamp to achieve the overall gain of 19.2dB. On the basis of the proposed op-amp, we fabricated a-InGaZnO TFT comparator circuit, which could successfully operate at 100 Hz to control the duty ratio from 25% to 75% with the slew rate of 0.625V/μs.

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