ICEIC 2025, Osaka, Japan
January 19 - January 22, 2025 (Sun. - Wen.), Osaka International House
A Novel Low-Power Level Shifter With Stacked Structure Based on a-IGZO Thin-Film Transistors
Kyeongbin Lee, Kyungmin Choi, Hyunwoo Kim and Hojin Lee
Abstract
In this paper, we propose a novel level shifter based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The proposed level shifter achieves low power consumption by employing a stacking structure and enhances connectivity with the external panel by using only a single input clock signal.
2013 SSDM, Fukuoka, Japan
KIEEME 2021, Pyeongchang, Korea