2017 SPIE Optics + Photonics, San diego, USA
06-10 August, 2017 (Sun - Thu), San Diego Convention Center
<Oral Session : Organic Field-Effect Transistors XVII>
A Rational Design of Polymer Semiconductors for High-Resolution Solution Tandem Electronics
Han Wool Park, Keun-Yeong Choi, Haejung Hwang, Boseok Kang, Hee Jun Yoon, Kyung Ah Nam,Yun-Hi Kim, Kilwon Cho, Hojin Lee, and Do Hwan Kim
Abstract
Organic electronics has recently attracted a great deal of interest because of its solution-processed potential applications in flexible, wearble and even stretchable devices. Dissolvability of semiconducting organic materials in typical solvents potentially provides these materials with unique opportunities to acheive the electronics with cheaper and simpler manufacturing processes. This opportunity, however, serves as a trade-off when one tries to implement these processes in assembling practical electronic devices, since the as-deposited tandem layers would be defenceless to following solution processes. As a result, this controversial issue remains valid not only while applying advanced printing processes, but also while applying photolithography for semiconducting polymers.
Herein, we describe a whole new type of polymer semiconductors based on sol-gel chemistry, which is capable of remarkably showing chemical and mechanical reliability during sequential photolithography processes. The critical step in a sol-gel reaction is the formation of a highly cross-linked network out of molecular precursors through hydrolysis and condensation reactions. By carefully manipulating this step, we could prepare an orthogonal polymer semiconductor gel thin film with heterogeneous inter-penetrated polymer network (HIPN). The resulting structures yielded films that are highly tolerant against harsh external stimuli. Consequently, formation of high resolution patterns of various semiconductor polymers as well as fabrication of tandem devices and circuits based on multiple semiconducting materials could be readily attained using conventional photolithography processes, and finally fabricate high-resolution CMOS circuits with micron n- and p-type organic channels.
