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SID Display Week 2023, San Jose, USA

May 12 - May 17, 2024 (Sun. - Fri.), San Jose Convention Center


KakaoTalk_20240618_155316141_01.jpg


Silicone-integrated Photolithography of Small-molecule Phosphorescent Emitter for Ultrahigh-resolution Micro-OLEDs

Ryungyu Lee, Keun-Yeong Choi, Hyukmin Kweon, Borina Ha, Changhee Lee, Soyeon Lee, Seonkwon Kim, Seunghan Lee, Hyobin Ham, Hayoung Lim, Moon-Ki Jeong, Gyurim Park, Joon Hak Oh, Moon Sung Kang, Youngmin You, Jeong Ho Cho, BongSoo Kim, Do Hwan Kim, and Hojin Lee


Abstract


   In this paper, we propose an ultrahigh-resolution organic lightemitting diodes (OLEDs) pixels patterned by conventional photolithography through by incorporating silicone into phosphorescent small-molecule networks. This siliconeintegrated phosphorescent organic light-emitting diode (SIphOLED), in which silicone molecules are homogeneously crosslinked with small-molecule light-emitting materials, can effortlessly achieve to 3,000 PPI ultrahigh-resolution patterns using the photolithography process.

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SID Display Week 2023, Los Angeles, USA

May 22 - May 26, 2023 (Mon. - Fri.), Los Angeles Convention Center


KakaoTalk_20230530_142910510_05.jpg


An AMOLED Pixel Circuit Compensating for Variation of Sub-threshold Swing and Threshold Voltage Based on Double Gate a-IGZO TFTs 

Hyunwoo Kim, Yongchan Kim, and Hojin Lee

Abstract

   In this paper, an AMOLED pixel circuit based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) compensating for variations in sub-threshold swing (SS) and threshold voltage (VTH) of driving TFT is proposed. The proposed pixel circuit is composed of five TFTs and one capacitor. From the simulation results, when the SS and VTH shifts of the driving up to ±10% and ±1 V, the maximum OLED current error can be suppressed to 3.6% and 7.2%, respectively. 

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2017 SPIE Photonics West, San Francisco, USA

January 28 - February 2, 2017 (Sat - Thu), The Moscone Center

 

e060e646f06217117ea6f1e3b202749f.jpg

 

<Oral Session : Session 7: RF-Submillimeter-Wave II>

Wireless chemical sensor system based on electromagnetically energy-harvesting metamaterials

Wonwoo Lee, Yonghee Jung, Hyunseung Jung, and Hojin Lee

 

 Abstract

We propose a novel wireless chemical sensor system by using energy-harvesting metamaterials at microwave frequencies. The proposed metamaterial sensor consists of a single split ring resonator and rectifier circuit for harvesting the energy at the specific frequency. We confirmed that the concentration of ethanol mixed with water can be detected by the proposed sensor by resonance property between the source antenna and the metamaterial which induces the variation in the energy-harvesting rate of our sensor system. Finally, we expect that our metamaterial-based wireless sensor can pave the way to the miniaturized wireless sensor systems including biochemical and dielectric environment sensors.

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2020.02.12 14:51

IMID 2019, Gyeongju, Korea

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IMID 2019, Gyeongju, Korea

August 27 - 30, 2019 (Tue. - Fri.), HICO




Micropatterned polymer light-emitting diodes (μ-PLEDs) based on Orthogonal Polymer Semiconductors

Kyun-Yeong Choi, Han Wool Park, Do Hwan Kim, and Hojin Lee


근영_IMID.jpg


Abstract


  In this paper, a micro-patterned 2-color OLED was fabricated through a sequential solution process based on standard photolithography. Previously, we

developed a sol-gel process to obtain the orthogonality of organic semiconductor against the solvents and chemicals so that we could apply the standard photo-lithography and dry-etch process to achieve micron-size patterns of light-emitting polymers with MEH-PPV and F8T2-based orthogonal polymer semiconductor gel (OPSG) through sequential solution processes.


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2022.11.11 20:32

IMID 2022, Pusan, Korea

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IMID 2022, Pusan, Korea

August 23 - August 26, 2022 (Tue. - Fri.), Bexco


KakaoTalk_20221111_165547216_03.jpg


Novel AMOLED Pixel Circuit Compensating for Variations in Sub-threshold Swing and Threshold Voltage of a-IGZO Thin-Film Transistors

Hyunwoo Kim, Yongchan Kim, and Hojin Lee


Abstract

  

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have been employed for the backplane of AMOLED displays because of high carrier mobility, good uniformity, and low off currenet. However, it is inevitable to have variations in threshold voltage (VTH) and sub-threshold swing (S.S.) due to bias-stress during display operations as well as the fabrication deviations. The VTH shift can be attributed to charge trapping in gate dielectric and interface states of semiconductor materials while the S.S. variation can cause a problem of leakage current that increases power consumption. Therefore, a circuit-level compensation method for deviation is required. In this paper, we have proposed a novel a-IGZO TFT pixel circuit which can compensate for the VTH and S.S. variation of the drive TFT.

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