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SID Display Week 2023, San Jose, USA

May 12 - May 17, 2024 (Sun. - Fri.), San Jose Convention Center


KakaoTalk_20240618_155316141_03.jpg


Extreme Low Power a-InGaZnO TFT Scan Driver with Extra Clock Signal Modulation

Hyunwoo Kim, Jinho Moon, Dongseok Kim, and Hojin Lee


Abstract

 In this paper, a scan driver with extra clock signal using amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) is proposed. Extra clock signal with variable frequency modulates the pull-down unit of scan driver in order to reduce the power consumption. Proposed scan driver is suitable for operating extreme low-power displays such as always on display.



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2022.11.11 20:39

IMID 2022, Pusan, Korea

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IMID 2022, Pusan, Korea

August 23 - August 26, 2022 (Tue. - Fri.), Bexco


KakaoTalk_20221111_165547216_12.jpg


Monolithic Circuit Integrated with VOC Sensor Based on a-IGZO TFT

Eseudeo Yun, Yongchan Kim, Hanbin Choi, Do Hwan Kim, and Hojin Lee


Abstract

  

As volatile organic compound (VOCs) gases generated in industrial production lines is harmful to the human body, study on detecting VOCs gases has attracted much interest. For detection of various VOCs, Amorphous oxide semiconductors (AOS) have been highly researched to produce high-sensitivity chemoresistive-type VOCs gas sensors. Especially, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) are considered the most promising candidate for gas sensors, thanks to their high field-effect mobility, low leakage current, good uniformity, and superior electrical stability with the low-temperature process. However, a-IGZObased gas sensors reported so far still remain in an early stage such as for resistor-type sensor or a single TFT. In this talk, we proposed a monolithic sensor circuit with high sensitivity capable of amplifying the sensing signal of the solution-processed a-IGZO sensor TFT. 

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2015 iMiD, Daegu, Republic of Korea

August 18 - 21, 2015 (Tue - Fri), EXCO

 

IMG_2994.JPG

 

 

<Poster Session : P2-63>

Novel Operational Amplifier Based on a-InGaZnO TFTs for the Display Driving System

Yongchan Kim, Keun-Yeong Choi, Kichan Kim, and Hojin Lee

 

Abstract

In this paper, we proposed a novel operational amplifier (op-amp) by using amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). The proposed op-amp is composed only with n-type TFTs, and can be fabricated within the area of . Through the simulation, the proposed op-amp is confirmed to have an open-loop voltage gain of 29dB at up to 2.6kHz when supply voltage is ±15V. We expect the proposed a-InGaZnO TFT op-amp to be used in designing the power control and driving system for various display applications.

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2015 iMiD, Daegu, Republic of Korea

August 18 - 21, 2015 (Tue - Fri), EXCO

 

imid2015_H_Jung.jpg

 

<Oral Session : 12-4>

Synthetic Multi Spectral Metamaterials for Frequency Selective Terahertz-Color Filter

Hyunseung Jung, Heyoung Kang, and Hojin Lee

 

Abstract

In this paper, we demonstrate numerical and experimental studies of the tunable synthetic multi-spectral material (SMM) filter for visible and terahertz ranges. The proposed filter is based on double layered complementary cut wires (CCWs) to construct a thin-film etalon structure. The proposed SMM filter can be fully the fabricated by the conventional photolithography process, and it is confirmed to work as both the transmissive color filter and terahertz filter. From measurement results, we confirm that by adjusting thickness of resonance cavity, SMM filter can show different colors in the visible range but maintain the same transmission spectra in the terahertz range. Furthermore, it is also demonstrated that by adjusting pitch of CCW patterns, transmission peak of the SMM filter can be controlled in the terahertz range while the transmission spectra in the visible range can be kept same.

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