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2016 APCCAS, Jeju, Republic of Korea

October 25 - 28, 2016 (Tue - Fri), Ramada Plaza Jeju Hotel

 

 

<Special Session : Display Driver Interface Circuits>

On-Glass Operational Amplifier using Solution-Processed a-IGZO TFTs

Daejung Kim, Keun-Yeong ChoiHojin Lee

 

 APCCAS 최근영.jpg

 

Abstract

In this paper, we presented a novel operational amplifier (op-amp) only with solution-processed n-type amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs and common-source amplifier were fabricated on glass substrate through the solution process and confirmed to show stable electrical characteristics suitable for display driving circuits. Based on the experimental results, we designed an op-amp to have an overall gain of 30.5 dB, a cut-off frequency of 1.47 kHz, and a unit gain frequency of 6.65 kHz when supply voltage was ±15 V. Finally, by constituting the comparator, the proposed op-amp is expected to be used in power control and driving systems for display applications.

 

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SID Display Week 2022, San Jose, USA

May 9 - May 13, 2022 (Mon. - Fri.), McEnery Convention Center


SID 문.jpg


Adaptive Frequency Driving Scan Driver with NOR Logic Gate Based on a-InGaZnO TFTs

Jinho Moon, Eseudeo Yun, Yongchan Kim, Kwun-Bum Chung, and Hojin Lee


Abstract


  A scan driver combined with NOR Logic gate using amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) is proposed. NOR logic gate masks the output signal from the scan driver in order to control the driving frequency. Proposed frequency adaptive scan driver is expected to reduce power consumption depending on the display contents.



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2017 SPIE Photonics West, San Francisco, USA

January 28 - February 2, 2017 (Sat - Thu), The Moscone Center

 

2b8027e2eea5996110f39af79b8ebc0b.jpg

 

<Oral Session : Session 1: THz Sources and Detectors I>

Polarization dependent resonance manipulation by terahertz meta-molecules 

Hyunseung Jung, Eunah Heo, Jaemok Koo, Chihun In, Hyunyong Choi, Moon Sung Kang, and Hojin Lee

 

 Abstract

In this study, we propose polarization dependent resonance manipulation by meta-molecules at terahertz frequencies. The proposed meta-molecules are combined with various numbers of H-shaped meta-atoms, which we refer as ‘moleculization’ of meta-atoms. We confirm that the laterally moleculized H-shaped meta-molecules successfully realize the unique properties that can modulate the resonance frequency for the specific polarization of an incident wave, while can keep one identical resonance frequency for their orthogonal polarization direction, simultaneously. Moreover, for the vertically moleculized H-shaped meta-molecules, we also find that the electromagnetically induced transparency (EIT) –like phenomenon can be achieved for the specific polarization direction, with their exceptional field enhancement properties.

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2018 SPIE Photonics West, San Francisco, United States

January 29 - February 1, 2018 (Mon - Thur), The Moscone Center

 


1517358531419.jpg



<Oral Session>

Solution-Processed Coplanar a-InGaZnO Thin Film Transistors with Photo-Patterned Ionic-Polymer Gate Dielectric

Dayoon Lee, Yongchan Kim, and Hojin Lee

 

 Abstract

We propose novel solution-processed coplanar amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) with photo-patterned ionic-polymer gate dielectric. We fabricated and measured the electrical characteristics of our coplanar TFTs, and confirmed the high field-effect mobility (~ 4.36 cm-2/V·s), high on-off ratio (~ 107) and good electrical stability. Based on the developed coplanar a-InGaZnO TFTs, we also have designed and fabricated a NMOS inverter with clear signal inversion for flexible electronics and sensor applications. Through this study, we expect that highly flexible and transparent advanced analog circuits and systems can be realized based on the proposed solution processible coplanar TFTs for human-machine interactions.

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2024.09.02 14:05

IMID 2024, Jeju, Korea

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IMID 2024, Jeju, Korea

August 20 - August 23, 2024 (Tue. - Fri.), ICC Jeju


KakaoTalk_20240902_105530006_04.jpg


Enhanced Optoelectrical Properties of Organic Light-Emitting Diodes by ZnO Nanoparticles Reacted with Organic Solvents 


Changhee Lee, Ryungyu Lee, Keun-Yeong Choi, and Hojin Lee 


Abstract

 In this study, we propose a novel post-processing method aimed at enhancing the Luminance of organic light-emitting diodes (OLEDs). This method leverages the reactivity between zinc oxide (ZnO) and organic solvents to improve device performance. Specifically, we aimed to increase the hole-to-electron matching ratio within the light-emitting layer by deliberately reducing the number of oxygen vacancies. These vacancies serve as pathways for carrier movement, and their reduction through the reaction of ZnO particles with organic solvents results in lowered electron injection. Consequently, this modification effectively increases the generation of excitons in the post-processed devices, leading to a significant improvement in luminance.

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