2012 SID Display Week, Boston, Massachusetts USA
June 5-8, 2012 (Tuesday - Friday), Boston Convention and Exhibition Center
<Poster Session : P14>
a-IGZO TFT Based Pixel Circuits for AM-OLED Displays
Hyunseung Jung, Yongchan Kim, Youngseok Kim, Charlene Chen, Jerzy Kanicki, and Hojin Lee
Abstract
In this paper, we analyze application of amorphous Indium–Gallium–Zinc–Oxide thin film transistors (a-InGaZnO TFTs) to voltage-driven pixel electrode circuit that could be used for 4.3-in. wide video graphics array (WVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compared to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the threshold voltage variation (ΔVTH) of driving TFT within acceptable operating error range.
