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2015 iMiD, Daegu, Republic of Korea

August 18 - 21, 2015 (Tue - Fri), EXCO

 

IMG_2994.JPG

 

 

<Poster Session : P2-63>

Novel Operational Amplifier Based on a-InGaZnO TFTs for the Display Driving System

Yongchan Kim, Keun-Yeong Choi, Kichan Kim, and Hojin Lee

 

Abstract

In this paper, we proposed a novel operational amplifier (op-amp) by using amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). The proposed op-amp is composed only with n-type TFTs, and can be fabricated within the area of . Through the simulation, the proposed op-amp is confirmed to have an open-loop voltage gain of 29dB at up to 2.6kHz when supply voltage is ±15V. We expect the proposed a-InGaZnO TFT op-amp to be used in designing the power control and driving system for various display applications.

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