2018 SPIE Photonics West, San Francisco, United States

2018 SPIE Photonics West, San Francisco, United States

January 29 - February 1, 2018 (Mon - Thur), The Moscone Center

 

<Oral Session>

Solution-Processed Coplanar a-InGaZnO Thin Film Transistors with Photo-Patterned Ionic-Polymer Gate Dielectric

Dayoon Lee, Yongchan Kim, and Hojin Lee

 

 Abstract

We propose novel solution-processed coplanar amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) with photo-patterned ionic-polymer gate dielectric. We fabricated and measured the electrical characteristics of our coplanar TFTs, and confirmed the high field-effect mobility (~ 4.36 cm-2/V·s), high on-off ratio (~ 107) and good electrical stability. Based on the developed coplanar a-InGaZnO TFTs, we also have designed and fabricated a NMOS inverter with clear signal inversion for flexible electronics and sensor applications. Through this study, we expect that highly flexible and transparent advanced analog circuits and systems can be realized based on the proposed solution processible coplanar TFTs for human-machine interactions.