AMSM 2024, Incheon, Korea
October 27 - October 30, 2024 (Sun. - Wen.), Songdo ConvensiA
Monolithic VOC Sensor Circuit Based on a-IGZO TFT
Kyungmin Choi, Keun-Yeong Choi, and Hojin Lee
Abstract
Volatile organic compounds (VOCs) generated in industrial production lines are harmful to human health, prompting significant research into detecting VOC gases. For detection of various VOCs, Amorphous oxide semiconductors (AOS) have been highly researched to achieve high-sensitivity chemo-resistive-type VOCs gas sensors. Especially, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) are attracting high attention due to their high field-effect mobility, low leakage current, good uniformity, and superior electrical stability at low processing temperatures. In this paper, we propose a monolithic sensor circuit designed to amplify the sensing signal of solution-processed a-IGZO sensor TFTs, achieving high sensitivity. The fabricated a-IGZO sensor TFT showed significant changes in transfer characteristics upon exposure to acetone gas, with decreased resistance and a negative threshold voltage shift. The proposed circuit, comprising three a-IGZO TFTs and one capacitor, demonstrated successful gas sensing through simulation, confirming accurate operation. Through this study, we confirmed that the proposed a-IGZO TFT sensor circuit was successfully operated with accurate gas sensing operations. It is expected that the proposed monolithic sensor circuit can be applied to future VOCs systems with highly sensitive detection.