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2015 iMiD, Daegu, Republic of Korea

August 18 - 21, 2015 (Tue - Fri), EXCO

 

IMG_2994.JPG

 

 

<Poster Session : P2-63>

Novel Operational Amplifier Based on a-InGaZnO TFTs for the Display Driving System

Yongchan Kim, Keun-Yeong Choi, Kichan Kim, and Hojin Lee

 

Abstract

In this paper, we proposed a novel operational amplifier (op-amp) by using amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). The proposed op-amp is composed only with n-type TFTs, and can be fabricated within the area of . Through the simulation, the proposed op-amp is confirmed to have an open-loop voltage gain of 29dB at up to 2.6kHz when supply voltage is ±15V. We expect the proposed a-InGaZnO TFT op-amp to be used in designing the power control and driving system for various display applications.

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2015 MRS fall Meeting, Boston, USA

November 29 - December 4, 2015 (Mon - Fri), John B. Hynes Veterans Memorial Convention Center

 

MRS1.jpg

<Poster Session : BB3-32>

Photolithography-Adaptive Organic Semiconductors for High-Resolution Flexible Tandem Electronics

Han wool  Park1, Keun-Yeong  Choi2, Hojin  Lee2, Do Hwan  Kim1

 

 

Abstract

Organic electronics has recently attracted a great deal of interest because of its solution-processed potential applications in flexible, wearble, and even stretchable devices. This, however, serves as a trade-off when one tries to implement these processes in assembling practical electronic devices, since the as-deposited films would be fragile to subsequent solution processes. Consequently, conventional photolithography is hardly applicable to solution-processed organic semiconductor layers for getting high-resolution pattern. In this talk, we demonstrate the whole new type of organic materials based on sol-gel chemistry, which is capable of remarkably showing chemical and mechanical stability during photolithography process. The critical step in a sol-gel reaction is the formation of a highly cross-linked network out of molecular precursors through hydrolysis and condensation reactions. By carefully manipulating this step, we could prepare self-assembled structures of either quasi-3D random or ladder characteristics. The resulting structures yielded films that are highly tolerant against harsh external stimuli. Moreover, the peculiar topology of organometallic gel network containing with molecular pores could be successfully utilized as a template to form a heterogeneous interpenetrated network (HIPN) with functional electronic organic units. As a result, we could achieve micron scaled patterns of organic semiconductor through the standard photolithography. Based on electrical properties of thin-film transistors with patterned organic semiconductor layers, we successfully designed and demonstrated a CMOS inverter circuit with micro-patterned n- and p-type channels based orthogonal organic semiconductor gels through sequential solution processes.

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2016 CLEO: 2016, San Jose, USA

June 5 - 10, 2016 (Sun - Fri), San Jose Convention Center

 

eff42cff80ddf5033426223f4bbb1c3f.jpg

 

 

<Poster Session : BB3-32>

Focusing of Terahertz Waves by Self-Complementary Meta-Atom toward Electromagnetically Induced Transparency

Hyunseung Jung1, Chihun In2, Hyunyong Choi2, Hojin Lee1

 

 

Abstract

Metamaterial analogues of electromagnetically induced transparency (EIT) have recently attracted worldwide researchers to realize intriguing applications such as slow light devices and nonlinear optics [1, 2]. However, conventional EIT analogues could be generated only by the destructive interference between asymmetrically arranged radiative (bright) and non-radiative (dark) atoms to produce the sharp transmission window within the broad reflection band. In this work, we studied a new way to achieve EIT-like spectral properties from a single self-complimentary meta-atom (SCM) by integrating cut-wire (CW) pair with a pseudo-complimentary cut-wire (p-CCW) structure within a unit cell. Different from the conventional EIT analogues, electric field (E-field) was highly enhanced and focused at edges of the hole and EIT-like properties are generated in the proposed SCM structure.

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2016 iMiD, Jeju, Republic of Korea

August 24 - 26, 2016 (Wed - Fri), ICC Jeju

 

951027b881114f9e1e47b973eff67722.jpg

<Oral Session : 67. Physics of Metamaterials>

Self-Complementary Meta-Atom based Transmissive Terahertz Metasurface with High Transparency in Visible Range

Hyunseung Jung, Hojin Lee

 

 

Abstract

In the past few years, meta-surfaces for focusing and steering the incident terahertz light have been reported by using metamaterial super-cells, which consist of various metamaterial atoms to spatially change the phase of terahertz waves [1]. Particularly, the transmissive meta-surfaces, in which complementary meta-atoms are formed on the metal-plane, have been considered as meta-lenses or holograms with higher signal-to-noise ratio in comparison with reflective type metamaterials [2]. However, since they can only transmit the resonant terahertz light and are nearly opaque in other frequency ranges, there are limitations to utilize frequency resources outside their resonances. In this paper, we develop novel meta-surfaces that not only exhibit transmissive resonance but also can transparent in visible range.

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2016 iMiD, Jeju, Republic of Korea

August 24 - 26, 2016 (Wed - Fri), ICC Jeju

 

 

<Oral Session : 60. Driving Circuit and Panel Design>

Low-Dropout Regulator based on a-InGaZnO Thin-Film Transistor for Display Driving Systems

Yongchan KimHojin Lee

 imid 김용찬.jpg

 

 

Abstract

Among various thin-film transistor (TFT) technologies developed so far for integrating the display driving system onto TFT arrays and, therefore, to eliminate the IC assembly, amorphous Indium-Gallium-Zinc-Oxide (a-InGaZnO) TFTs have shown favorable electrical characteristics to achieving the integrated driving circuitry. Previously, we had demonstrated a fully adaptive DC-DC converter circuit could be built with a-InGaZnO TFT based operational amplifier (op-amp). However, in order to make the adaptive DC-DC converter functional, it required an external circuit block made of commercial passive devices on a printed circuit board (PCB). Different from the reported DC-DC converter, Low-Dropout (LDO) regulators are well known to have simple structures with small occupied area, accurate output voltages, and low output ripples. In this paper, we designed a fully integrated LDO regulator on glass substrate for supplying the designated power to display systems.

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