2017 iMiD, Busan, Korea

2017 iMiD, Busan, Korea

August 28 - 31, 2017 (Mon - Thur), Convention Hall, BEXCO

 

 

 

<Poster Session>

Solution-Processed a-InGaZnO Thin Film Transistor Based Operational Amplifier for the Flexible Display Driving System

Yongchan Kim, Daejung Kim, Keun-Yeong Choi, Dayoon Lee, and Hojin Lee

 

 Abstract

 Currently, amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) have attracted much interest as a next-generation TFT backplane thanks to their high field-effect mobility, low leakage current, and good electrical stability. In particular, the formation of the active layer in a-InGaZnO TFTs through the solution process has been actively researched recently because of their optical transparency, flexibility and superior air stability. In this paper, we adopted a DLP (direct light patterning) process [1], and demonstrated the electrical characteristics of the TFTs and logic circuits fabricated on the glass. Through this study, we expect to realize solution-processed system-on-glass (SOG), for transparent, portable, and flexible flat panel displays.