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2015 MRS fall Meeting, Boston, USA

November 29 - December 4, 2015 (Mon - Fri), John B. Hynes Veterans Memorial Convention Center

 

MRS1.jpg

<Poster Session : BB3-32>

Photolithography-Adaptive Organic Semiconductors for High-Resolution Flexible Tandem Electronics

Han wool  Park1, Keun-Yeong  Choi2, Hojin  Lee2, Do Hwan  Kim1

 

 

Abstract

Organic electronics has recently attracted a great deal of interest because of its solution-processed potential applications in flexible, wearble, and even stretchable devices. This, however, serves as a trade-off when one tries to implement these processes in assembling practical electronic devices, since the as-deposited films would be fragile to subsequent solution processes. Consequently, conventional photolithography is hardly applicable to solution-processed organic semiconductor layers for getting high-resolution pattern. In this talk, we demonstrate the whole new type of organic materials based on sol-gel chemistry, which is capable of remarkably showing chemical and mechanical stability during photolithography process. The critical step in a sol-gel reaction is the formation of a highly cross-linked network out of molecular precursors through hydrolysis and condensation reactions. By carefully manipulating this step, we could prepare self-assembled structures of either quasi-3D random or ladder characteristics. The resulting structures yielded films that are highly tolerant against harsh external stimuli. Moreover, the peculiar topology of organometallic gel network containing with molecular pores could be successfully utilized as a template to form a heterogeneous interpenetrated network (HIPN) with functional electronic organic units. As a result, we could achieve micron scaled patterns of organic semiconductor through the standard photolithography. Based on electrical properties of thin-film transistors with patterned organic semiconductor layers, we successfully designed and demonstrated a CMOS inverter circuit with micro-patterned n- and p-type channels based orthogonal organic semiconductor gels through sequential solution processes.

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2015 MRS Spring Meeting, San Francisco, USA

April 6 - 10, 2015 (Mon - Fri), Moscone West Center

20150400.jpg

<Poster Session : Z8-14>

Babinet Crosslink Meta-Atoms for Novel Electromagnetically Induced Transparency Analogue

Hyunseung Jung and Hojin Lee

 

Abstract

In this study, we propose a novel EIT analogue by using so-called Babinet crosslink meta-atoms (BCM) at terahertz frequencies. As a BCM unit cell, the two cut-wire (CW) structures and single complementary cut-wire (CCW) aperture are integrated into one meta-atom structure. According to Babinet principle, since the complementary structure has orthogonal polarization compared with its original structure, two CW patterns in the BCMs are oriented for the parallel polarization direction so that they exhibit a broad reflection band, whereas the CCW aperture in the BCMs is oriented for the perpendicular polarization direction so that it exhibits a sharp transmission band to produce EIT properties. By utilizing this EIT analogue, the proposed BCM structures can achieve extraordinary focus of incident wave and subsequently transmit it through the structural window in each meta-atom, whereas the conventional EIT analogues merely transmit the incident wave at their transmission peak. Measurement results verify that the maximum field amplitude and the quality factor of the BCMs are enhanced by 20 times and 1.3 times in comparison to those of the incident field and the conventional CCW apertures, respectively. Therefore, by using the proposed BCMs, we can expect to overcome the power loss problem of incident waves in the conventional EIT analogues. Moreover, based on this exceptional field enhancement property, the proposed BCMs are expected to be utilized for the exotic applications such as low-power bio-chemical sensing and imaging devices, slow light applications with higher spatial resolution, and phase hologram systems.

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2016 APCCAS, Jeju, Republic of Korea

October 25 - 28, 2016 (Tue - Fri), Ramada Plaza Jeju Hotel

 

 

<Special Session : Display Driver Interface Circuits>

Design of Low-Dropout Regulator Using a-InGaZnO Thin-Film Transistors

Yongchan KimHojin Lee

 

 APCCAS 김용찬.jpg

 

 

 

Abstract

In this paper, we presented a low-dropout (LDO) regulator composed with amorphous indium-gallium-zinc-oxide thin-film transistors (a-InGaZnO TFTs) for display driving systems. Through extensive simulation works, we confirmed that the proposed LDO regulator successfully could control the output voltage levels to follow the reference input voltages, and the output voltage ripple could be suppressed below 48mV when input reference voltage was changed from 14V to 15V with 100mV fluctuation.

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2016 APCCAS, Jeju, Republic of Korea

October 25 - 28, 2016 (Tue - Fri), Ramada Plaza Jeju Hotel

 

 

<Special Session : Display Driver Interface Circuits>

On-Glass Operational Amplifier using Solution-Processed a-IGZO TFTs

Daejung Kim, Keun-Yeong ChoiHojin Lee

 

 APCCAS 최근영.jpg

 

Abstract

In this paper, we presented a novel operational amplifier (op-amp) only with solution-processed n-type amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs and common-source amplifier were fabricated on glass substrate through the solution process and confirmed to show stable electrical characteristics suitable for display driving circuits. Based on the experimental results, we designed an op-amp to have an overall gain of 30.5 dB, a cut-off frequency of 1.47 kHz, and a unit gain frequency of 6.65 kHz when supply voltage was ±15 V. Finally, by constituting the comparator, the proposed op-amp is expected to be used in power control and driving systems for display applications.

 

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2016 CLEO: 2016, San Jose, USA

June 5 - 10, 2016 (Sun - Fri), San Jose Convention Center

 

eff42cff80ddf5033426223f4bbb1c3f.jpg

 

 

<Poster Session : BB3-32>

Focusing of Terahertz Waves by Self-Complementary Meta-Atom toward Electromagnetically Induced Transparency

Hyunseung Jung1, Chihun In2, Hyunyong Choi2, Hojin Lee1

 

 

Abstract

Metamaterial analogues of electromagnetically induced transparency (EIT) have recently attracted worldwide researchers to realize intriguing applications such as slow light devices and nonlinear optics [1, 2]. However, conventional EIT analogues could be generated only by the destructive interference between asymmetrically arranged radiative (bright) and non-radiative (dark) atoms to produce the sharp transmission window within the broad reflection band. In this work, we studied a new way to achieve EIT-like spectral properties from a single self-complimentary meta-atom (SCM) by integrating cut-wire (CW) pair with a pseudo-complimentary cut-wire (p-CCW) structure within a unit cell. Different from the conventional EIT analogues, electric field (E-field) was highly enhanced and focused at edges of the hole and EIT-like properties are generated in the proposed SCM structure.

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