KIEEME 2021, Pyeongchang, Korea
June 30 - July 2, 2021 (Wed. - Fri.), Alpensia
Low-Power Capacitive Pressure Sensor Circuit Based on Coplanar a-IGZO TFTs Using Photo-Patternable Ionic Polymer Gate Dielectric
Heejoo Park, Yongchan Kim, Changhyeon Cho, and Hojin Lee
Abstract
Pressure sensor
circuits based on thin-film transistors (TFTs) have emerged as promising
candidates for future technologies such as human-machine interfaces, wearable
health monitoring, and electronic skins. To be utilized in the future sensing
system, high performance and low-operating voltage are essential factors, and,
in this regard, ionic polymer electrolytes have attracted considerable
attention as gate dielectric of TFT to give superior advantages including
exhibit high capacitance, excellent mechanical flexibility, and optical
transparency. However, most approaches for patterning ionic polymer electrolyte
such as transfer or nozzle-based printing methods often suffer from low spatial
resolution and inaccurate fine pattern control.
